savantic semiconductor product specification silicon npn power transistors 2SD1213 d escription with to-3pn package low collector saturation voltage large current capacity. complement to type 2sb904 applications large current switching of relay drivers, high-speed inverters, converters. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 30 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 20 a i cp collector current (pulse) 30 a t c =25 60 p c collector power dissipation t a =25 2.5 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1213 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;r be = ; 30 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 60 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =8a; i b =0.4a 0.4 v i cbo collector cut-off current v cb =40v; i e =0 0.1 ma i ebo emitter cut-off current v eb =4v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =2v 70 280 h fe-2 dc current gain i c =10a ; v ce =2v 30 f t transition frequency i c =1a ; v ce =5v 120 mhz switching times t on turn-on time 0.3 s t s storage time 0.6 s t f fall time i c =10a;i b1 =-i b2 =-0.5a v cc =10v ;r l =1 d 0.02 s h fe-1 classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon npn power transistors 2SD1213 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
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